Fast Lithography Image Simulation By Exploiting Symmetries in Lithography Systems

Fast simulation of stochastic exposure distribution in electron-beam lithography

The relative critical dimension variation of nanoscale features has become large enough to significantly affect the minimum feature size and maximum circuit density realizable in most lithographic processes. One source of such variation is the line edge roughness (LER). In the electron-beam lithographic process, the fluctuation of exposure (energy deposited) in the resist is one of the main fac...

Computer Simulation from Electron Beam Lithography to Optical Lithography

Simulation of electron beam lithography and optical lithography has been combined to investigate the influence of a distorted photomask feature on final photoresist image. Unlike the previous optical lithography simulation which was based on ideal mask design, the combined simulation has shown that mask distortion due to electron proximity effect play an important role in worsening the optical ...

Lithography Simulation in Semiconductor Manufacturing

In the 30 years since lithography modeling was first introduced, optical lithography simulation has progressed from a curiosity, to a research and development tool, and finally to a manufacturing tool. While much has been published on new developments in lithography simulators and their use in advanced lithography development, less is published on how simulators have been used and are soon to b...

Approach to EUV Lithography Simulation

Nanometer-Scale Patterning on PMMA Resist by Force Microscopy Lithography

Nanoscale science and technology has today mainly focused on the fabrication of nano devices. In this paper, we study the use of lithography process to build the desired nanostructures directly. Nanolithography on polymethylmethacrylate (PMMA) surface is carried out by using Atomic Force Microscope (AFM) equipped with silicon tip, in contact mode. The analysis of the results shows that the ...